• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to an assembly comprising a first element having a first coefficient of thermal expansion, a second element having a second coefficient of thermal expansion and at least one joint connecting said first element and said second element, characterized in that said joint is heterogeneous and comprises a stack of at least a first elementary joint of first density and a second elementary seal of second density, said first and second densities being different. The invention also relates to a method of manufacturing an assembly according to the invention.
    公开号:FR3038535A1
    申请号:FR1556573
    申请日:2015-07-10
    公开日:2017-01-13
    发明作者:Rabih Khazaka
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    Assembly comprising two different elements of thermal expansion coefficient and a heterogeneous sintered density seal and method of manufacturing the joint
    The field of the invention is that of techniques for assembling two elements via sintered joints and in particular that of the assembly of components on substrates allowing, for example, to postpone a semiconductor chip on a metallized substrate with or without metals noble, advantageously intended for high power density and high temperature applications (greater than 200 ° Q.
    In known manner, to form electronic components, semiconductor elements must be attached to substrates. Lead-based (Pb-Sn, Pb-Sn-Ag) and tin (Sn-Ag, Sn-Ag-Cu) solders are among the most used in the field of electronics. However, European regulations prohibit the use of Pb because of its environmental toxicity. Tin solders (Sn) are limited at low temperatures (below 200 ° C) and do not correspond to the temperatures targeted by large gap semiconductors such as silicon carbide SiC or gallium nitride GaN. Other high temperature solders exist. They are either based on gold (Au) making them very expensive, or have a very high melting temperature (above 500 ° C) not compafble with semiconductors.
    Au-based solders such as AuSn, AuGe, AuSi alloys have high Young's moduli compared to Pb-based solders, which causes very high stresses on assembled components leading in some cases to the breakage of components.
    An example of this problem is illustrated in Figure 1 showing the fracture in a component GaN on Si (1mm Si) following soldering AuSn at 300 ° C in a housing with a sole Cü (Ni / Au finish).
    In addition, the solders have relatively low thermal conductivities (of the order of 40 W / mK) in addition to the reliability problems during storage at high temperature (creation of fragile and empty Kirkendall intermetallics: the diffusion of material in a sense causes the diffusion of vacuum (gap) in the other, which can cause a deformation of the material) and during thermal cycling (propagation of cracks in the joint).
    To avoid the use of solders, other technologies such as sintering of micro and metallic nanoparticles and the "transient liquid phase" (TLP) fastening corresponding to phase diffusion welding are in full expansion.
    The sintering of metal microparticles has been the subject of various studies such as that of Zhang et al., "Pressure-Assisted Low-Temperature Sintering of Silver Paste and an Alternative Die-Attach Solution to Solder Reflow", IEEE Transactions on Electronics Packaging Manufacturing , flight. 25, no. 4, October, 2002 (pp 279-283). There is proposed a paste containing Ag particles several μm in diameter, requiring very high temperatures for sintering (600 ° C). In order to reduce this temperature to values more compatible with electronic components, pressures of several tens of MPa are necessary making the assembly process very complicated (especially for the assembly of several components having different thicknesses) and not compatible with components that are sensitive to high pressures.
    A reduction in temperature and pressure during sintering is possible by using metal particles of nanometric sizes. It is preferable that the paste contains a dispersant to prevent agglomeration of the nanoparticles. A polymeric binder is also added to the dispersant and the nanoparticles to ensure the appearance of the dough (a pasty solution) and limit the appearance of cracks during drying. The solvent makes it possible to obtain variable viscosities adapted to different deposition techniques ("dispensing": deposit using a dosing stylus, and "screen-printing"): screen printing). The development of this type of pastes containing nanometric particles has been patented by Lu et al., "Nanoscale metal paste for interconnect and method of use", US Pat. No. 8,257,795 B2. This type of paste, requiring no pressure during sintering, is compatible with Ag or Au topcoats (noble materials that improve the adhesion of the interconnection).
    The sintering process of the metal nanoparticle pastes plays an important role in the joint density and consequently in its physical properties. The relationship between process-density and mechanical properties has been the subject of several studies such as that of Knoerr et al. "Power semiconductor joining the sintering of silver nanoparticles: ICPS, March 16-18, International Conference on Integrated Power Electronics Systems. 2010, Nuremberg, Germany, and that of Caccuri et al. "Mechanical Properties of Sintered Agas a New Material for the Bonding: Influence of the Density." Journal of Electronic Materials, Vol. 43, No. 12, 2014.
    In this context, the Applicant sought to exploit the density latitude offered by the sintering processes to propose an assembly solution for forming a single heterogeneous joint that combines different density properties, inducing different and controlled physical properties and allowing a better collection of thermomechanical stresses between two elements having different thermal expansion coefficients, for example a semiconductor device and a substrate, during thermal cycles. With the solution proposed in the present invention, it is also possible to improve the adhesion of a pressure-sensitive component to a substrate requiring high pressure by making multi-stage sintering.
    More specifically, the present invention relates to an assembly comprising a first element having a first coefficient of thermal expansion, a second element having a second coefficient of thermal expansion and at least one joint connecting said first element and said second element, characterized in that said joint is heterogeneous and comprises a stack of at least a first elementary joint of first density and a second elementary joint of second density, said first and second densities being different.
    According to variants of the invention, one of the elements comprises a semiconductor component, which may for example be a silicon diode.
    According to variants of the invention, said heterogeneous seal is metallic.
    According to variants of the invention, the first element and / or the second element has (a) a metal surface and connected to said seal.
    According to variants of the invention, one of the two elements is a substrate which may be of the "DBC" type for "Direct Bonded Copper", corresponding to a plate that may be Al 2 O 3 or Si 3 N 4 or AlN, and comprising at least one metal layer on one of its faces. It can act of a copper film stuck directly on a ceramic plate.
    This type of substrate is particularly powerful in the context of power components, having to withstand high temperatures.
    According to variants of the invention, the first element and the second element have a topcoat intended to be in contact with one of the elementary joints.
    According to variants of the invention, the thickness of the topcoat is of the order of one nanometer or one micron (thus being able to vary between a few nanometers and up to micron see more).
    According to variants of the invention, the first elementary seal and the second elementary seal comprise nanoparticles.
    According to variants of the invention, the first elementary gasket comprises microparticles or nanoparticles, the second elementary gasket comprising nanoparticles (this may be particularly advantageous in the case of semiconductor components sensitive to pressure).
    According to variants of the invention, at least one of the first and / or second elements comprises (s) a copper surface, which may be a topcoat.
    According to variants of the invention, the first elementary seal is based on silver, the second elementary seal being also based on silver.
    According to variants of the invention, the first elementary seal is based on copper, the second elementary seal being also based on copper.
    According to variants of the invention, the first elementary seal is based on gold, the second elementary seal being also based on gold.
    According to variants of the invention, the first elementary seal is based on silver and copper, the second elementary seal being also based on silver and copper.
    According to variants of the invention, the first density is of the order of 90% relative to the solid metal which may be silver, the second density being of the order of 60% relative to the solid metal which may be of money. The invention also relates to a method of manufacturing an assembly comprising a heterogeneous seal and two different elements of thermal expansion coefficient, comprising the following steps: - the deposition of a first paste or a first film to the surface of the first element; a first sintering operation in first conditions of temperature and pressure so as to produce a first elementary seal of first density; depositing a second paste or a second film on the surface of said first elementary seal; a second sintering operation under second conditions of temperature and pressure so as to define a second elementary seal of second density different from said first density on the surface of the first elementary seal to form said heterogeneous seal; - the application of the second element.
    According to variants of the invention, the second sintering operation is performed under conditions of lower temperature and / or pressure (s) than those of the first sintering operation.
    According to variants of the invention, the first sintering operation is carried out by applying an intermediate piece to said first deposited paste or to said first film, which may be a glass plate or a Teflon® element, or a ceramic element, or an aluminum element.
    According to variants of the invention, the second sintering operation is carried out by applying the second element to the second paste or to the second film.
    According to variants of the invention, the method comprises a step of drying said first dough and / or a step of drying said second dough. This step can make it possible to obtain better controlled seal thicknesses for sintering under pressure (conditions and time depending on the evaporation temperature of the binder and the solvent in the paste).
    According to variants of the invention, the first and / or the second paste is (are) metallic (s) or the first film and / or the second film is (are) metallic (s).
    According to variants of the invention, the first and second dough are metallic.
    According to variants of the invention, the deposition of the first paste and / or the deposition of the second paste is (are) carried out by screen printing.
    According to variants of the invention, the deposition of the first dough and / or the deposition of the second dough is (are) carried out by depositing using a dispensing stylet ("dispensing").
    According to variants of the invention, the deposition of the first dough and / or the deposition of the second dough is (are) performed (s) by direct printing ("imprint").
    According to variants of the invention, the first element comprising a copper surface, the first paste is based on silver, the second paste is also based on silver.
    According to variants of the invention, the first and the second paste comprises (include) nanoparticles and may (may) comprise a dispersant and / or a binder and / or a solvent.
    According to alternative methods of manufacturing an assembly comprising a heterogeneous seal according to the invention, the first and / or the second paste comprises (include) metal nanoparticles.
    According to alternative methods of manufacturing an assembly comprising a heterogeneous seal according to the invention, the first element is a substrate, the second element is a semiconductor chip.
    The heterogeneous density seal proposed in the present patent application may also make it possible to ensure good adhesion to the "non-noble" metals (Cu or Ni) or other substrates generally requiring the presence of a high pressure to ensure a high level of adhesion. good adhesion (better adhesion due to the plastic deformation of the substrate and the attachment mechanism (commonly called "interlocking") for example with a shear stiffness greater than 10 MPa without the need to apply pressure on the chips during assembly, as will be explained below in the detailed description of this patent application.The invention will be better understood and other advantages will appear on reading the following description given by way of non-limiting and with the figures in which: FIG. 1 illustrates the fracture in a GaN on Si component (1 mm Si) following an AuSn soldering at 300 ° C. in in case with a Cu sole (Ni / Au finish); FIGS. 2a to 2c illustrate the main steps of a method of producing an assembly according to the invention; FIGS. 3a to 3c illustrate examples of porosities obtained according to different sintering operations for obtaining elementary joints in an assembly of the invention; FIG. 4 illustrates an image of a section of an example of a heterogeneous joint proposed in an assembly according to the invention; FIG. 5 illustrates the variation of the shear stiffness of a Si diode (Al / Ti / Ni / Ag finish) attached to a DBC having different finishes with different sintering conditions in connection with assembly examples according to FIG. invention; FIG. 6 shows an example of the delamination of the Ni-Ag layer (generally used as back-side metallization of the components) of an Si chip attached to a Cu-finished DBC.
    The present invention is particularly interesting in the context of high power density and high temperature applications (greater than 200 ° C), to eliminate the metallization steps by noble metals metallized substrates type "DBC" for "direct bonded copper >>, "AMB >> for" active metal brazing "and others, to ensure good adhesion with substrates requiring high pressure and to improve the thermomechanical reliability of the joint.
    The "AMB" type substrate (Active Metal Brazing) comprises a film or layer interposed between the ceramic substrate and the copper film. An increase in temperature up to that of the fusion of the film "AMB" without pressure generally of the whole makes it possible to react by diffusion phenomena the AMB film with, on the one hand, copper, and on the other hand the ceramic substrate.
    Typically, the present invention makes it possible to produce electrical and / or mechanical interconnections that can operate at temperatures greater than 300 ° C. with, during assembly of the active components, a process temperature profile of less than 250 ° C. and pressures. very low, typically less than 100 g / cm 2 (or even without pressure) using pastes containing metal nanoparticles. It also makes it possible to obtain joints with a variance of the properties within the same joint and ensures a good mechanical adhesion on substrates or the pressure during sintering is necessary, without needing to come to press on the active components.
    It consists first of all in producing a first sintered layer with a high pressure on the substrate (requiring a high pressure to ensure good mechanical adhesion) by using a flat plate which does not adhere to the sintered seal (glass, aluminum, Teflon, Al203 ...). The plate is then removed after this first part. This same step can be reproduced several times with different sintering conditions to obtain different joint densities (lower pressures and / or temperatures to have a less dense joint). Since this step is done without the presence of the semiconductors, pastes containing micron sized particles can be used with high temperature sintering processes and high pressures.
    A paste with particles of nanometric sizes is then deposited on the already sintered joint. The semiconductor is then placed on the dough and a modest pressure (which may be less than 100 g / cm 2) is applied to ensure good contact between the dough and the metallization of the chip.
    A temperature cycle for sintering the nanoparticle paste is then applied. At the end of the process, an electrical and mechanical interconnection is provided between the semiconductor and the substrate.
    The density of the last step of the joint can also be controlled by the process itself without varying the pressure. This interconnection technique has the following advantages: o all the conventional advantages of sintered joints (good thermal and electrical conductivity, operating temperature above process temperature, etc.); o low pressure or no pressure for sensitive components to attach several components with different thicknesses, while at the same time ensuring good adhesion with substrates requiring high pressures (Cu, Ni, polymers ...); o A control of the density of the different layers in the same joint, allowing the control of the elastic modulus and the creation of the joints with layers that can withstand thermomechanical stresses and relax the stress at critical points (metallization of the chip for example) thus allowing better reliability during thermal cycles.
    It should be noted that the sintering process can be carried out by conduction from hot plates. Other techniques such as microwave or laser heating may also be employed.
    Example of assembly according to the invention:
    A silicon diode with an Al / Ti / Ni / Ag finish is attached to a DBC without any particular finishing of noble materials (Cu finish) using several sintering steps.
    Note that, in the case of a topcoat of the Cu substrate, a deoxidation step with formic acid is carried out just before the deposition of the paste.
    Example of a method of manufacturing an assembly according to the invention
    The method used to make this assembly is illustrated in FIGS. 2a to 2c.
    Step 1 :
    A first layer of silver paste (paste P1) compatible with the copper topcoats is deposited on the first element E1 constituted by the DBC (Al 2 O 3 layer between two Cu layers) by screen printing. The silver paste may typically comprise a dispersant, a binder, a solvent and silver nanoparticles. A step of drying the dough is carried out at 130 ° C for 30 minutes. The sintering operation is then carried out by pressing with a glass plate (the intermediate piece Ei) on the dried pulp with a pressure of 12 MPa and a temperature of 280 ° C for 200 seconds, as illustrated in Figure 2a to form the first elementary seal J1, the heat source being referenced SCh- These conditions make it possible to have good adhesion between the seal and the Cu layer with a measured shear stiffness of 28 MPa (by attaching a chip Si finish Ag). It should be noted that by testing at pressures of 9 MPa and 6 MPa, the Applicant has found decreases in shear stiffness of 50% and 80%.
    Under a pressure of 3 MPa, the shear stiffness becomes almost zero.
    In the manufacture of the proposed structure, the glass plate Ei is easily detached from the first elementary seal thus formed and having a first density.
    2nd step :
    A second layer of a paste P2 containing silver nanoparticles and compatible with the Ag and Au finishes is deposited by screen printing on the first sintered elementary seal (sintered joint J1), as illustrated in FIG. 2b.
    The chip Si (Ag finish), ie the element E2 with a topcoat C2, is then placed on the Ag paste and a sintering cycle at a temperature of 250 ° C. with a very low pressure (typically less than 0.1 MPa) is achieved (the heat source being referenced Sch). The modest pressure applied ensures good contact between the dough and the chip.
    The density of this layer can be controlled through the temperature rise ramp as shown by the SEM images of FIGS. 3a, 3b and 3c taken respectively at the end of ramps of 6, 15 and 30 ° C./min.
    The decrease in the joint density and the increase in the size and number of pores in the joint observed by increasing the temperature ramp are initially related to the evaporation of the solvent, the binder and the dispersant (used for dough formation) during sintering. Under very fast ramps of temperature rise, the volatile products do not have time to escape from the joint before the beginning of sintering and their evaporation during the process will lead to the creation of numerous and large pores.
    FIG. 2c illustrates the assembly thus produced comprising a heterogeneous seal resulting from the stacking of the first elementary seal J1 and the second elementary seal J2 making it possible to assemble the elements E1 and E2. The effect of several sintering parameters and different topcoats of DBC on the shear stiffness of Si diodes with an Al / Ti / Ni / Ag finish was studied.
    For pulp P2, which does not require the use of pressure, it is possible to notice that the average shear stiffnesses for a Cu topcoat and an Au topcoat are 4.5 MPa and 13 MPa respectively. using a sintering temperature of 250 ° C for 20 minutes with a ramp up temperature of 30 ° C / min. These sintering conditions lead to a joint density comparable to that shown in Figure 3c. Even using a method to achieve a much denser seal (comparable to that shown in Figure 3a), the shear stiffness on the DBC with a Cu finish is 6.5 MPa. This increase can be related to the larger contact area when the seal is denser. After the shear tests, the observations show a Cu and Au side delamination of the DBC indicating better adhesion with the Ag metallization of the chip. In order to take advantage of the good adhesion of the sintered Ag seam to an Ag topcoat, the structure presented in FIG. 4 was produced and tested in shear. FIG. 4 represents a sectional view of a joint made in two steps and showing the two layers relating to the first elementary joint J1 and to the second elementary joint J2 with different densities forming the final joint and connecting the Cu layer of the DBC and the silicon diode Si, via the layer C2. This structure shows an average stiffness of 19 MPa using the same sintering conditions as those for Au and Cu topcoats (250 ° C and a ramp of 30 ° C / min). After the shear test, the observations show a delamination on the Ag metallization layer of the chip. A high pressure (12 MPa) sintering test of P1 paste on a Cu topcoat gives the best shear stiffness with an average value of 28 MPa.
    Figure 5 shows the variation of the mechanical rigidity of the chips using several topcoat materials and the different sintering conditions already mentioned. In addition, for each condition and following the shear tests, the interface with the lowest adhesion is indicated. For each condition, three samples were tested for acceptable statistics and are illustrated by three black squares shown in Figure 5.
    It is clear that the decrease in the joint density induces a decrease in the thermal and electrical conductivity of the attachment of the chip. For example, according to US Pat. No. 8,257,795 B2, the variation of the relative density of the seal from 80% to 57% induces a decrease of the electrical conductivity of 4.2x105 to 2.6x105 (Q.cm) '1 and the thermal conductivity of 78 to 30 W / mK. The lowest values remain in the same order of magnitude as the conventional solders presented in the following table.
    Following these results, the Applicant has been able to consider that the reduction of the relative density of joint up to 50% remains interesting for the electrical and mechanical properties.
    It should be noted that the method of assembly with the pulp 1 with a pressure of 12 MPa makes it possible to have the best rigidity in shear. However, this method is not compatible with components that are sensitive to high pressures and the joint is very dense (high Young's modulus) which can lead to high stresses on semiconductor metallizations during thermal cycling (difference in CTE between the Si and the DBC). FIG. 6 shows an example of the delamination of the Ni-Ag layer (generally used as back-side metallization of the components) of an Si chip attached to a Cu-finished DBC after 700 thermal cycles between -40 ° C. and 160 ° C. using a dense jdnt J (seal 1 of FIG. 4). After 700 cycles, the shear stiffness increases from 28 MPa to 10 MPa and a delamination of 60% of the initial surface is observed by SAM (Acoustic Scanning Microscopy). This problem of thermomechanical reliability can be delayed or even avoided by using the developed structure of the present invention to obtain a relatively low density seal in contact with the semiconductor. This induces a lower Young's modulus and consequently a better collection of thermomechanical stresses resulting in a better seal reliability.
    权利要求:
    Claims (22)
    [1" id="c-fr-0001]
    An assembly comprising a first element having a first coefficient of thermal expansion, a second element having a second coefficient of thermal expansion and at least one joint connecting said first element and said second element, characterized in that said joint is heterogeneous and comprises a stacking at least a first elementary joint of first density and a second elementary seal of second density, said first and second densities being different.
    [2" id="c-fr-0002]
    2. An assembly according to claim 1, characterized in that one of the elements comprises a semiconductor component, which may be a silicon diode.
    [3" id="c-fr-0003]
    3. Assembly according to one of claims 1 or 2, characterized in that said heterogeneous seal is metallic.
    [4" id="c-fr-0004]
    4. Assembly according to one of claims 1 to 3, characterized in that the first element and / or the second element has (s) a metal surface to be assembled and connected to said seal.
    [5" id="c-fr-0005]
    5. Assembly according to one of claims 1 to 4, characterized in that at least one of the two elements is a ceramic substrate which may be Al 2 O 3 or Si 3 N 4 or AlN and may comprise at least one metal layer on one of his faces.
    [6" id="c-fr-0006]
    6. Assembly according to one of claims 1 to 5, characterized in that the first element and the second element have a topcoat intended to be in contact with one of the elementary joints.
    [7" id="c-fr-0007]
    7. Assembly according to claim 6, characterized in that the thickness of the topcoat is of the order of a nanometer or micron.
    [8" id="c-fr-0008]
    8. Assembly according to one of claims 1 to 7, characterized in that at least one of the first and / or second elements comprises (s) a copper surface, which can be a topcoat.
    [9" id="c-fr-0009]
    9. Assembly according to one of claims 1 to 8, characterized in that the first elementary seal and / or the second elementary seal comprises (nt) nanoparticles.
    [10" id="c-fr-0010]
    10. Assembly according to one of claims 1 to 9, characterized in that the first elementary seal comprises microparticles, the second elementary seal comprising nanoparticles.
    [11" id="c-fr-0011]
    11. Assembly according to one of claims 1 to 10, characterized in that the first elementary seal and / or the second elementary seal is (are) based on silver or copper or gold or silver and copper.
    [12" id="c-fr-0012]
    12. Assembly according to one of claims 1 to 11, characterized in that the first density is of the order of 90% relative to the solid metal can be silver, the second density is of the order of 60 % compared to the solid metal can be money.
    [13" id="c-fr-0013]
    13. A method of manufacturing an assembly comprising a heterogeneous seal in density and two different elements of thermal expansion coefficient, comprising the following steps: - the deposition of a first paste or a first film on the surface of the first element ; a first sintering operation in first conditions of temperature and pressure so as to produce a first elementary seal of first density; depositing a second paste or a second film on the surface of said first elementary seal; a second sintering operation under second conditions of temperature and pressure so as to define a second elementary seal of second density different from said first density on the surface of the first elementary seal to form said heterogeneous seal; - the application of the second element.
    [14" id="c-fr-0014]
    14. A method of manufacturing an assembly according to claim 13, characterized in that the first and / or the second paste is (are) metallic (s) or the first film and / or the second film is (are) metallic ( s).
    [15" id="c-fr-0015]
    15. A method of manufacturing an assembly comprising a heterogeneous seal according to one of claims 13 or 14, characterized in that the second sintering operation is performed under conditions of lower temperature and / or pressure (s) than those of the first sintering operation.
    [16" id="c-fr-0016]
    16. A method of manufacturing an assembly comprising a heterogeneous seal according to one of claims 13 to 15, characterized in that the first sintering operation is carried out by applying an intermediate piece on said first deposited paste or on said first film, may be a glass plate or a Teflon® element, or a ceramic element, or an aluminum element.
    [17" id="c-fr-0017]
    17. A method of manufacturing an assembly comprising a heterogeneous seal according to one of claims 13 to 16, characterized in that the second sintering operation is carried out by applying the second element on the second paste or on the second film.
    [18" id="c-fr-0018]
    18. A method of manufacturing an assembly comprising a heterogeneous seal according to one of claims 13 to 17, characterized in that it comprises a step of drying said first dough and / or a step of drying said second dough.
    [19" id="c-fr-0019]
    19. A method of manufacturing an assembly comprising a heterogeneous seal according to one of claims 13 to 18, characterized in that the deposition of the first paste and / or the deposition of the second paste is (are) carried out by screen printing.
    [20" id="c-fr-0020]
    20. A method of manufacturing an assembly comprising a heterogeneous seal according to one of claims 13 to 19, characterized in that the first element comprising a copper surface, the first paste is based on silver, the second paste being also based on money.
    [21" id="c-fr-0021]
    21. A method of manufacturing an assembly comprising a heterogeneous seal according to one of claims 13 to 20, characterized in that the first and / or the second paste comprises (include) metal nanoparticles.
    [22" id="c-fr-0022]
    22. A method of manufacturing an assembly comprising a heterogeneous seal according to one of claims 13 to 21, characterized in that the first element is a substrate, the second element is a semiconductor chip.
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    同族专利:
    公开号 | 公开日
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    US20170012017A1|2017-01-12|
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1556573A|FR3038535B1|2015-07-10|2015-07-10|ASSEMBLY COMPRISING TWO DIFFERENT THERMAL EXPANSION COEFFICIENT ELEMENTS AND A DENSITY HETEROGENEOUS FRITTE JOINT AND METHOD OF MANUFACTURING THE ASSEMBLY|FR1556573A| FR3038535B1|2015-07-10|2015-07-10|ASSEMBLY COMPRISING TWO DIFFERENT THERMAL EXPANSION COEFFICIENT ELEMENTS AND A DENSITY HETEROGENEOUS FRITTE JOINT AND METHOD OF MANUFACTURING THE ASSEMBLY|
    EP16178287.5A| EP3115128A1|2015-07-10|2016-07-07|Assembly comprising two elements of different thermal expansion coefficient and a sintered seal of uniform density and method of manufacturing the assembly|
    US15/205,273| US20170012017A1|2015-07-10|2016-07-08|Assembly comprising two elements of different thermal expansion coefficients and a sintered joint of heterogeneous density and process for manufacturing the assembly|
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